| Reviews |
| - '...the book succeeds well in its aim of providing an informed survey of the rapidly developing topic of the nitride semiconductors, at an expository level suited both to those entering the field from other semiconductor areas and to those already in the field.
' - John W. Allen, High Temperatures-High Pressures, 1998
|
| Description | | - One of the first comprehensive books on an extremely fashionable subject
- Vast field of industrial and commercial applications
- Written by the foremost experts on each topic
- Tutorial style, written for young researchers both in academia and industry
| | This book was motivated in large part by the tremendous interest shown in nitride semiconductors by the scientific community in recent years. The interest is due to the wide range of commercially viable industrial applications such as visible and ultraviolet optoelectronics. The aim of this book is to elucidate the physics of nitride-based materials and related devices, and to provide to
graduate students and young researchers a rapid introduction to this burgeoning field. Chapters of tutorial style are of medium length, and have been commissioned from some of the very best experts on each topic, both from academia and from industry. All aspects arising from the dual challenges of achieving high-quality, single crystal material and engineering optoelectronic devices are
addressed. In the first chapters, the reader will learn about the nitrides in the context of other semiconductors, and will be exposed to the methods used to grow these materials. The chapters which follow discuss the materials' performance from the point of view of electronic transport, optical and structural properties. Finally, an extensive review of device applications is provided in the area
of modern transistors, ultraviolet detectors and light emitters. |
Readership: Researchers and graduates in academic condensed matter and materials science departments. Professionals working on the development and commercialization of electronic and optoelectronic devices based on nitride semiconductor compounds.
| Contents |
1.
Beyond silicon: the rise of compound semiconductors
2.
Deposition and properties of III-nitrides by molecular beam epitaxy
3.
MOVPE growth of nitrides
4.
Structural defects and materials performance of the III-V nitrides
5.
Modulation spectroscopy of the group III nitrides
6.
Optical properties and lasing in GaN
7.
Defect spectroscopy in the nitrides
8.
Electronic and optical properties of GaN based quantum wells
9.
Transistors and detectors based on GaN related materials
10.
III-V nitride based short-wavelength LEDs and LDs
11.
Cubic group III nitrides
|
| Authors, editors,
and contributors |
Edited by Bernard Gil, Director of Research, National Center for Scientific Research, University of Montpellier II
|
The specification in this catalogue, including without
limitation price, format, extent, number of illustrations,
and month of publication, was as accurate as
possible at the time the catalogue was compiled.
Occasionally, due to the nature of some contractual restrictions, we
are unable to ship a specific product to a particular territory.
Jacket images are provisional and liable to change before publication.
|
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